Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB
Huang P.*, Chen, A., Dong, J., et al.,Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB (arXiv:2307.14807, under review by Applied Physics Letter).