Welcome to my personal website!
I am Puyang Huang (黄浦阳), currently a master student in the School of Information Science and Technology at ShanghaiTech University, under the supervision of Prof. Xufeng Kou. Before that, I obtained my bachelor degree in Electrical and Computer Engineering from Shanghai Jiao Tong University. My current research interest is spin-orbit torque (SOT) related physics in strong spin orbit coupling (SOC) materials (semiconductor and topological insulators), strain-modualted voltage control magnetic anisotropy (VCMA) and MRAM-based neural network application.
Publications
Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB
Huang P.*, Chen, A., Dong, J., et al.,Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB (arXiv:2307.14807, under review by Applied Physics Letter).
SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training
Huang P.*, Gu, Y.*, Fu, C.*, et al.,SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training (under review by IEDM 2023).
Wafer-scale Epitaxial Growth of the Thickness-controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications
Liu, X.*, Huang P.*, Xia, Y.*, et al., Wafer-scale Epitaxial Growth of the Thickness-controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications (accepted by Advanced Functional Materials (2023) DOI: 10.1002/adfm.202304454)
Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-based Spin-Orbit Torque Devices
Huang P.*, Liu, X.*, Xin, Y.*, et al.,Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-based Spin-Orbit Torque Devices (arXiv:2209.06001, under review by Nature Materials).
Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures
Li, L., Wu, Y., Liu, X., Liu, J., Ruan, H., Zhi, Z., Zhang, Y., Huang, P., Ji, Y., Tang, C., Yang, Y., Che, R., Kou, X., Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures. Advanced Materials, 35, 2207322 (2023). DOI: https://doi.org/10.1002/adma.202207322
Tailoring the Magnetic Exchange Interaction in MnBi2Te4 Superlattices via the Intercalation of Ferromagnetic Layers
Chen, P., Yao, Q., Xu, J., Sun, Q., Grutter, A., Quarterman, P., Balakrishnan, P., Kinane, C., Caruana, A., Langridge, S., Li, A., Achinuq, B., Heppell, E., Ji, Y., Liu, S., Cui, B., Liu, J., Huang, P., Liu, Z., Yu, G., Xiu, F., Hesjedal, T., Zou, J., Han, X., Zhang, H., Yang, Y., Kou, X., Tailoring the Magnetic Exchange Interaction in MnBi2Te4 Superlattices via the Intercalation of Ferromagnetic Layers. Nature Electronics, 6, 18–27 (2023). DOI: https://doi.org/10.1038/s41928-022-00880-1